连续冷却速率对直拉单晶硅电学性能的影响.zip

包括开题报告，任务书，ppt，翻译原文和译文


摘要 ……………………………………………………………………………….I
Abstract …………………………………………………………………………...II
1 引言……………………………………………………………………………...1
1.1太阳能电池发展背景………………………………………………………..1
1.2研究少子寿命的意义………………………………………………………..3
1.3晶体硅的热处理……………………………………………………………..5
1.4晶体硅热过程研究的国内外现状及发展趋势……………………………..6
1.5本课题研究意义及内容……………………………………………………..7
2 实验内容………………………………………………………………………...9
2.1实验样品与试剂……………………………………………………………..9
2.2实验仪器……………………………………………………………………10
2.3实验方案……………………………………………………………………14
2.4实验流程图…………………………………………………………………15
2.5实验过程……………………………………………………………………16
3 结果与讨论……………………………………………………………………..21
3.1冷却速率对少子寿命的影响………………………………………………21
3.2冷却速率对电阻率的影响…………………………………………………27
4 结论…………………………………………………………………………….30
参考文献………………………………………………………………………….31
致谢 ……………………………………………………………………………...32




摘 要
在单晶硅太阳能电池的池制作过程中，单晶硅片要经过磷扩散、铝背电极制作等几步热过程，这些热过程对单晶硅片的电学性能会产生怎样的影响，对能否制备高效硅晶太阳电池非常重要。本文就热过程不同的连续冷却速率对单晶硅少数载流子寿命和电阻率的影响进行了研究。实验结果表明，单晶硅块经高温加热分别以不同冷却速率冷却后，其少子寿命随冷却速率的增加而降低，与此同时，其电阻率也随冷却速率的增加而降低。本文还对实验的结果进行了理论分析。

关键词: 单晶硅；少子寿命；电阻率；连续冷却。


Effect of continuous cooling rate on the electrical properties of Czochralski silicon

Abstract

Czochralski (CZ) silicon is about to participate into several thermal process during the production process of CZ silicon solar battery, the cooling rate in the cool down process, however, has a considerable influence upon the electrical properties of CZ silicon. In our experiment, several cooling rates are taken into consideration to research the minority-carrier lifetime and resistivity of CZ silicon buck after cooling down. And the result of experiment shows that, after cooling down within different rates, respectively, after thermal insulation, through analyzing the minority-carrier lifetime and resistivity after the continuous cooling, minority-carrier lifetime in CZ silicon buck decreases with the increase of cool rate, and the resistivity appears in the same way.

Key words: Czochralski silicon; minority-carrier lifetime; resistivity; continuous cooling.